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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers
Product data sheet 2003 Aug 20
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
FEATURES * Very low forward voltage * High surge current * Ultra small plastic SMD package. APPLICATIONS * Low voltage rectification * High efficiency DC/DC conversion * Voltage clamping * Inverse polarity protection * Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package.
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2005AEV PMEG3005AEV PMEG4005AEV PINNING PIN 1 2 3 4 5 6 DESCRIPTION cathode cathode anode anode cathode cathode 20 30 40 V V V MAX. 0.5 UNIT A
handbook, halfpage 6
5
4
1, 2 5, 6
3, 4
MHC310
1
2
3
Fig.1 MARKING TYPE NUMBER PMEG2005AEV PMEG3005AEV PMEG4005AEV RELATED PRODUCTS TYPE NUMBER PMEGxx05AEA PMEG2005EB PMEG2010EA DESCRIPTION MARKING CODE G1 G2 G3
Simplified outline (SOT666 and symbol).
FEATURE SOD323 (SC-76) package SOD523 (SC-79) package higher forward current
0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier 0.5 A; 20 V very low VF MEGA Schottky rectifier 1 A; 20 V very low VF MEGA Schottky rectifier
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2005AEV PMEG3005AEV PMEG4005AEV IF IFRM IFSM Tj Tamb Tstg Notes 1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 x 10 mm. 4. Solder point of cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS in free air; notes 1 and 2 in free air; notes 2 and 3 note 4 VALUE 405 215 80 UNIT K/W K/W K/W continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature note 1 tp 1 ms; 0.5; note 2 tp = 8 ms; square wave; note 2 note 3 note 3 - - - - - - - -65 -65 20 30 40 0.5 3.5 10 150 +150 +150 V V V A A A C C C CONDITIONS MIN. MAX. UNIT
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified.
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
PMEG2005AEV PMEG3005AEV PMEG4005AEV SYMBOL VF PARAMETER forward voltage CONDITIONS TYP. IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IR continuous reverse current VR = 10 V; note 1 VR = 20 V; note 1 VR = 30 V; note 1 VR = 40 V; note 1 Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 1 V; f = 1 MHz 90 150 210 280 355 15 40 - - 66 MAX. 130 190 240 330 390 40 200 - - 80 TYP. 90 150 215 285 380 12 - 40 - 55 MAX. 130 200 250 340 430 30 - 150 - 70 TYP. 95 155 220 295 420 7 - - 30 43 MAX. 130 210 270 350 470 20 - - 100 50 mV mV mV mV mV A A A A pF UNIT
2003 Aug 20
4
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MDB675
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
105 handbook, halfpage IR (A)
(1)
MDB676
104
(1)
(2)
(3)
103
(2)
10
102
1
10
(3)
10-1
0
0.2
0.4
VF (V)
0.6
1 0
PMEG2005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
5
10
15
VR (V)
20
PMEG2005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
150
MDB677
Cd (pF) 100
50
0 0 5 10 15 VR (V) 20
PMEG2005AEV f = 1 MHz; Tamb = 25 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2003 Aug 20
5
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
103 handbook, halfpage IF (mA) 102
MDB672
105 handbook, halfpage IR (A)
(1)
MDB673
104
(1)
(2)
(3)
103
(2)
10
102
1
10
(3)
10-1
0
0.2
0.4
VF (V)
0.6
1
0
10
20
VR (V)
30
PMEG3005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
PMEG3005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.5
Forward current as a function of forward voltage; typical values.
Fig.6
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
120
MDB674
Cd (pF)
80
40
0 0 5 10 15 VR (V) 20
PMEG3005AEV f = 1 MHz; Tamb = 25 C.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
2003 Aug 20
6
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
103 handbook, halfpage IF (mA) 102
MDB669
105 handbook, halfpage IR (A)
(1)
MDB670
104
(1)
(2)
(3)
103
(2)
10
102
1
10
(3)
10-1
0
0.2
0.4
VF (V)
0.6
1 0
PMEG4005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
10
20
30
VR (V)
40
PMEG4005AEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.8
Forward current as a function of forward voltage; typical values.
Fig.9
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
100 Cd (pF) 80
MDB671
60
40
20
0 0 5 10 15 VR (V) 20
PMEG4005AEV f = 1 MHz; Tamb = 25 C.
Fig.10 Diode capacitance as a function of reverse voltage; typical values.
2003 Aug 20
7
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
PACKAGE OUTLINE
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2003 Aug 20
8
NXP Semiconductors
Product data sheet
Very low VF MEGA Schottky barrier rectifiers
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV
DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2003 Aug 20
9
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11687

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